Ultrafast Pulsed Laser

About the Facility

In partnership with the Saskatchewan Structural Sciences Centre, the Ultrafast Pulsed Laser facility provides unparalleld precision when performing Single Event Effects testing. Our laser facility can be used to quickly scan silicon dies, and inject faults into the device.

The facility was originally built to conduct research using ultrashort pulses from Ti-doped sapphire lasers and laser amplifiers for a variety of fundamental research in physics, chemistry, biology, and now semiconductor reliabilty.

Contact:

George Belev

Technical Specifications

Excitation Wavelength

480-700 nm (OPA 9400, Coherent)

1100-1600 nm (OPA 9800 Coherent

Imaging Wavelength 1310 nm
Microscope  MPM200-SGP Thorlabs
Software Verdi/Vitesse/RegA/OPA suite
Absorption Single & Two Photon Absorption